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Si4808DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
10
T J = 150 °C
1
0.1
30 V
24 V
T J = 25 °C
0.01
0.001
0.0001
0
25
50
75
100
125
150
1
0.0
0.3
0.6
0.9
1.2
1.5
T J - Temperature (°C)
Reverse Current vs. Junction Temperature
200
160
120
80
40
0
C oss
V F - Forward Voltage Drop (V)
Forward Voltage Drop
0
6
12
18
24
30
V DS - Drain-to-Source Voltage (V)
Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71157 .
Document Number: 71157
S09-0867-Rev. C, 18-May-09
www.vishay.com
5
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